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Aluminum nitride (AlN) heat-dissipating substrates provide both high heat dissipation and electrical insulation
The maximum thermal conductivity is 250W/mk.
Aluminum Nitride Substrate
This aluminum nitride substrate can achieve both high heat dissipation and electrical insulation. As of its role of dissipating heat while maintaining insulation, it is used as a heat-dissipating substrate for power semiconductors and optical communication lasers in the 5G era.
In addition to the general-purpose grade 170W/mk and the high thermal conductivity grade 200W/mk, we now offer the ultra-high thermal conductivity grade 250W/mk.
It is highly evaluated as a heat-dissipating substrate for electronic devices that require higher heat dissipation.
Semiconductor laser (laser diode) submounts、Power semiconductor substrates
| Grade | FAN-170 | FAN-200 | FAN-250F | |
|---|---|---|---|---|
| Thermal conductivity | W/m・K（RT） | 170 | 200 | 250 |
| Thermal emissivity | （100℃） | 0.93 | ||
| Thermal expansion coefficient | 10-6/℃（RT～400℃） | 4.5 | ||
| Insulation resistance | Ω・cm（RT） | ＞1013 | ||
| Dielectric strength | kV/mm（RT） | 15 | ||
| Dielectric constant | （1MHz） | 8.8 | ||
| Dielectric loss | 10-4（1MHz） | 5 | ||
| Bending strength | MPa | 350 | ||
| Density | g/cm3 | 3.3 | ||
| yttrium (Y) | wt% | 3.4 | ||
Opening hours are from 9:00 to 17:30 every weekday.
